Deposition and Characterization of Magnetron Sputtered Beta-Tungsten Thin Films

β-W is an A15 structured phase commonly found in tungsten thin films together with the bcc structured W, and it has been found that β-W has the strongest spin Hall effect among all metal thin films. Therefore, it is promising for application in spintronics as the source of spin-polarized current that can be easily manipulated by electric field. However, the deposition conditions and the formation mechanism of β-W in thin films are not fully understood. The existing deposition conditions for β-W make use of low deposition rate, high inert gas pressure, substrate bias, or oxygen impurity to stabilize the β-W over α-W, and these parameters are unfavorable for producing β-W films with high quality at reasonable yield. In order to optimize the deposition process and gain insight into the formation mechanism of β-W, a novel technique using nitrogen impurity in the pressure range of 10-5 to 10-6 torr in the deposition chamber is introduced. This techniques allows the deposition of pure β-W thin films with only incorporation of 0.4 at% nitrogen and 3.2 at% oxygen, and β-W films as thick as 1μm have been obtained. The dependence of the volume fraction of β-W on the deposition parameters, in